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October 27, 2014

Integrated Nanotechnology Lab at KAUST Demonstrates 1000% Stretching in Mono-Crystalline Silicon

With only one single step lithography process, Prof. Muhammad Hussain’s Integrated Nanotechnology Lab at KAUST has demonstrated record breaking stretching in mono crystalline silicon without support from any naturally stretchable material like polymer or such. Using a completely CMOS compatible process Dr. Jhonathan Rojas- a recent KAUST graduate from the Electrical Engineering Program in collaboration with Prof. Ian Foulds’ student Arpys Carreno demonstrate 30 times area expansion of a distributed network of hexagonal silicon island which can host various electronics. Such system can be game changer for wide area electronics such as energy harvesting, sensor and such. As per the esteemed reviewer, “Overall, the work suggests a viable strategy that can be simply applied to the highly stretchable electronic devices.”.

Prof. Hussain conceptualized the idea, Dr. Rojas carried out the experiment and characterization and Arpys performed the Finite Element Method modeling to optimize the design. The detail results have been published in prestigious Applied Physics Letters (

Dr. Rojas completed his PhD under Prof. Hussain as a founding batch student. In less than five years, he has published 30 scholarly papers including 13 first authored, 3 invited and 5 cover articles. He will be joining King Fahd University of Petroleum and Minerals as an Assistant Professor of the Electrical Engineering Department from September 2015.​